Hauptseite > Publikationsdatenbank > Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source > print

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100 1 _ |a Zhao, Q.T.
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245 _ _ |a Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source
260 _ _ |c 2011
295 1 0 |a 2011 Proceedings of the European Solid-State Device Research Conference (ESSDERC). - 2011 . - S. 251 - 253
336 7 _ |a Contribution to a conference proceedings
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700 1 _ |a Yu, W.J.
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700 1 _ |a Zhang, B.
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700 1 _ |a Schmidt, M.
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700 1 _ |a Richter, S.
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700 1 _ |a Buca, D.
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700 1 _ |a Hartmann, J.M.
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700 1 _ |a Luptak, R.
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700 1 _ |a Fox, A.
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700 1 _ |a Bourdelle, K.K.
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700 1 _ |a Mantl, S.
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