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000017299 1001_ $$0P:(DE-Juel1)VDB7408$$aSeemann, K.$$b0$$uFZJ
000017299 245__ $$aOrigin of the Planar Hall Effect in Nanocrystalline Co60Fe20B20
000017299 260__ $$aCollege Park, Md.$$bAPS$$c2011
000017299 300__ $$a086603
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000017299 440_0 $$04925$$aPhysical Review Letters$$v107$$x0031-9007$$y8
000017299 500__ $$3POF3_Assignment on 2016-02-29
000017299 500__ $$aK. M. S. thanks A. T. Hindmarch, C. H. Marrows, B. J. Hickey, and Ph. Mavropoulos for fruitful discussions. Y. M. acknowledges the HGF-YIG Programme VH-NG-513 for funding and the Julich Supercomputing Centre for computational time.
000017299 520__ $$aAn angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co60Fe20B20 thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co60Fe20B20 obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at.% boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. Furthermore, we experimentally demonstrate that the anomalous Hall effect contributes negligibly in the present case.
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000017299 7001_ $$0P:(DE-Juel1)130548$$aBlügel, S.$$b3$$uFZJ
000017299 7001_ $$0P:(DE-Juel1)VDB37182$$aMokrousov, Y.$$b4$$uFZJ
000017299 7001_ $$0P:(DE-Juel1)130582$$aBürgler, D.E.$$b5$$uFZJ
000017299 7001_ $$0P:(DE-Juel1)VDB102014$$aScheider, C.M.$$b6$$uFZJ
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