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Origin of the Planar Hall Effect in Nanocrystalline Co60Fe20B20

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2011
APS College Park, Md.

Physical review letters 107, 086603 () [10.1103/PhysRevLett.107.086603]

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Abstract: An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co60Fe20B20 thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co60Fe20B20 obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at.% boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. Furthermore, we experimentally demonstrate that the anomalous Hall effect contributes negligibly in the present case.

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Note: K. M. S. thanks A. T. Hindmarch, C. H. Marrows, B. J. Hickey, and Ph. Mavropoulos for fruitful discussions. Y. M. acknowledges the HGF-YIG Programme VH-NG-513 for funding and the Julich Supercomputing Centre for computational time.

Contributing Institute(s):
  1. Elektronische Eigenschaften (PGI-6)
  2. Quanten-Theorie der Materialien (IAS-1)
  3. Quanten-Theorie der Materialien (PGI-1)
  4. Jülich-Aachen Research Alliance - Simulation Sciences (JARA-SIM)
  5. Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology (JARA-FIT)
  6. Jülich Aachen Research Alliance - High-Performance Computing (JARA-HPC)
Research Program(s):
  1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011
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 Record created 2012-11-13, last modified 2020-04-23


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