TY  - JOUR
AU  - Seemann, K.
AU  - Freimuth, F.
AU  - Zhang, H.
AU  - Blügel, S.
AU  - Mokrousov, Y.
AU  - Bürgler, D.E.
AU  - Scheider, C.M.
TI  - Origin of the Planar Hall Effect in Nanocrystalline Co60Fe20B20
JO  - Physical review letters
VL  - 107
SN  - 0031-9007
CY  - College Park, Md.
PB  - APS
M1  - PreJuSER-17299
SP  - 086603
PY  - 2011
N1  - K. M. S. thanks A. T. Hindmarch, C. H. Marrows, B. J. Hickey, and Ph. Mavropoulos for fruitful discussions. Y. M. acknowledges the HGF-YIG Programme VH-NG-513 for funding and the Julich Supercomputing Centre for computational time.
AB  - An angle dependent analysis of the planar Hall effect (PHE) in nanocrystalline single-domain Co60Fe20B20 thin films is reported. In a combined experimental and theoretical study we show that the transverse resistivity of the PHE is entirely driven by anisotropic magnetoresistance (AMR). Our results for Co60Fe20B20 obtained from first principles theory in conjunction with a Boltzmann transport model take into account the nanocrystallinity and the presence of 20 at.% boron. The ab initio AMR ratio of 0.12% agrees well with the experimental value of 0.22%. Furthermore, we experimentally demonstrate that the anomalous Hall effect contributes negligibly in the present case.
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000294067500010
DO  - DOI:10.1103/PhysRevLett.107.086603
UR  - https://juser.fz-juelich.de/record/17299
ER  -