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@ARTICLE{Seemann:17299,
author = {Seemann, K. and Freimuth, F. and Zhang, H. and Blügel, S.
and Mokrousov, Y. and Bürgler, D.E. and Scheider, C.M.},
title = {{O}rigin of the {P}lanar {H}all {E}ffect in
{N}anocrystalline {C}o60{F}e20{B}20},
journal = {Physical review letters},
volume = {107},
issn = {0031-9007},
address = {College Park, Md.},
publisher = {APS},
reportid = {PreJuSER-17299},
pages = {086603},
year = {2011},
note = {K. M. S. thanks A. T. Hindmarch, C. H. Marrows, B. J.
Hickey, and Ph. Mavropoulos for fruitful discussions. Y. M.
acknowledges the HGF-YIG Programme VH-NG-513 for funding and
the Julich Supercomputing Centre for computational time.},
abstract = {An angle dependent analysis of the planar Hall effect (PHE)
in nanocrystalline single-domain Co60Fe20B20 thin films is
reported. In a combined experimental and theoretical study
we show that the transverse resistivity of the PHE is
entirely driven by anisotropic magnetoresistance (AMR). Our
results for Co60Fe20B20 obtained from first principles
theory in conjunction with a Boltzmann transport model take
into account the nanocrystallinity and the presence of 20
$at.\%$ boron. The ab initio AMR ratio of $0.12\%$ agrees
well with the experimental value of $0.22\%.$ Furthermore,
we experimentally demonstrate that the anomalous Hall effect
contributes negligibly in the present case.},
keywords = {J (WoSType)},
cin = {PGI-6 / IAS-1 / PGI-1 / JARA-SIM / JARA-FIT / JARA-HPC},
ddc = {550},
cid = {I:(DE-Juel1)PGI-6-20110106 / I:(DE-Juel1)IAS-1-20090406 /
I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)VDB1045 /
$I:(DE-82)080009_20140620$ / I:(DE-Juel1)VDB1346},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Multidisciplinary},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000294067500010},
doi = {10.1103/PhysRevLett.107.086603},
url = {https://juser.fz-juelich.de/record/17299},
}