000173140 001__ 173140
000173140 005__ 20240708133635.0
000173140 037__ $$aFZJ-2014-06553
000173140 041__ $$aEnglish
000173140 1001_ $$0P:(DE-Juel1)130297$$aSmirnov, Vladimir$$b0$$eCorresponding Author$$ufzj
000173140 1112_ $$a30th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC-2014)$$cAmsterdam$$d2014-09-22 - 2014-09-26$$gEU PVSEC 2014$$wNetherlands
000173140 245__ $$aApplication of p- and n- Type Microcrystalline Silicon Oxide (µc-SiOx:H) Alloys in Thin Film Silicon Single and Tandem Junction Solar Cells
000173140 260__ $$c2014
000173140 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1417795444_21918$$xOther
000173140 3367_ $$033$$2EndNote$$aConference Paper
000173140 3367_ $$2DataCite$$aOther
000173140 3367_ $$2ORCID$$aLECTURE_SPEECH
000173140 3367_ $$2DRIVER$$aconferenceObject
000173140 3367_ $$2BibTeX$$aINPROCEEDINGS
000173140 520__ $$aWe report on the development and application of p- and n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) alloys in single and tandem junction thin film silicon solar cells. Single junction amorphous (a-Si:H) and microcrystalline silicon (μc-Si:H) solar cells are prepared in p-i-n deposition sequence where the μc-SiOx:H films serve as n-type layers, which helps to build up the electric field in the diode and reduce parasitic absorption. In tandem solar cells, consisting of amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon sub-cells, silicon oxide (μc-SiOx:H) layers are placed between the sub cells, serving as an intermediate reflector (IR). Such IR layers should additionally fulfill requirements like appropriate refractive index, and serve as a nucleation layer to promote crystalline growth. Using μc-SiOx:H alloys we can enhance the optical band gap energy, adjust the refractive index over a considerable range, and dope the material p-type as well as n-type to make the material suitable for all these various tasks. The issues of stability against light induced degradation are also investigated. By using μc-SiOx:H doped layers, high efficiencies of 13.5% (initial) and 11.8% (stabilized) were achieved for tandem solar cells.
000173140 536__ $$0G:(DE-HGF)POF2-111$$a111 - Thin Film Photovoltaics (POF2-111)$$cPOF2-111$$fPOF II$$x0
000173140 7001_ $$0P:(DE-Juel1)130263$$aLambertz, Andreas$$b1$$ufzj
000173140 7001_ $$0P:(DE-Juel1)130238$$aFinger, Friedhelm$$b2$$ufzj
000173140 773__ $$y2014
000173140 909CO $$ooai:juser.fz-juelich.de:173140$$pVDB
000173140 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130297$$aForschungszentrum Jülich GmbH$$b0$$kFZJ
000173140 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130263$$aForschungszentrum Jülich GmbH$$b1$$kFZJ
000173140 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130238$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000173140 9132_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$aDE-HGF$$bForschungsbereich Materie$$lForschungsbereich Materie$$vohne Topic$$x0
000173140 9131_ $$0G:(DE-HGF)POF2-111$$1G:(DE-HGF)POF2-110$$2G:(DE-HGF)POF2-100$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bEnergie$$lErneuerbare Energien$$vThin Film Photovoltaics$$x0
000173140 9141_ $$y2014
000173140 920__ $$lyes
000173140 9201_ $$0I:(DE-Juel1)IEK-5-20101013$$kIEK-5$$lPhotovoltaik$$x0
000173140 980__ $$aconf
000173140 980__ $$aVDB
000173140 980__ $$aI:(DE-Juel1)IEK-5-20101013
000173140 980__ $$aUNRESTRICTED
000173140 981__ $$aI:(DE-Juel1)IMD-3-20101013