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| Home > Publications database > Application of p- and n- Type Microcrystalline Silicon Oxide (µc-SiOx:H) Alloys in Thin Film Silicon Single and Tandem Junction Solar Cells |
| Home > Publications database > Application of p- and n- Type Microcrystalline Silicon Oxide (µc-SiOx:H) Alloys in Thin Film Silicon Single and Tandem Junction Solar Cells |
| Conference Presentation (Other) | FZJ-2014-06553 |
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2014
Abstract: We report on the development and application of p- and n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) alloys in single and tandem junction thin film silicon solar cells. Single junction amorphous (a-Si:H) and microcrystalline silicon (μc-Si:H) solar cells are prepared in p-i-n deposition sequence where the μc-SiOx:H films serve as n-type layers, which helps to build up the electric field in the diode and reduce parasitic absorption. In tandem solar cells, consisting of amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon sub-cells, silicon oxide (μc-SiOx:H) layers are placed between the sub cells, serving as an intermediate reflector (IR). Such IR layers should additionally fulfill requirements like appropriate refractive index, and serve as a nucleation layer to promote crystalline growth. Using μc-SiOx:H alloys we can enhance the optical band gap energy, adjust the refractive index over a considerable range, and dope the material p-type as well as n-type to make the material suitable for all these various tasks. The issues of stability against light induced degradation are also investigated. By using μc-SiOx:H doped layers, high efficiencies of 13.5% (initial) and 11.8% (stabilized) were achieved for tandem solar cells.
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