TY  - CONF
AU  - Smirnov, Vladimir
AU  - Lambertz, Andreas
AU  - Finger, Friedhelm
TI  - Application of p- and n- Type Microcrystalline Silicon Oxide (µc-SiOx:H) Alloys in Thin Film Silicon Single and Tandem Junction Solar Cells
M1  - FZJ-2014-06553
PY  - 2014
AB  - We report on the development and application of p- and n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) alloys in single and tandem junction thin film silicon solar cells. Single junction amorphous (a-Si:H) and microcrystalline silicon (μc-Si:H) solar cells are prepared in p-i-n deposition sequence where the μc-SiOx:H films serve as n-type layers, which helps to build up the electric field in the diode and reduce parasitic absorption. In tandem solar cells, consisting of amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon sub-cells, silicon oxide (μc-SiOx:H) layers are placed between the sub cells, serving as an intermediate reflector (IR). Such IR layers should additionally fulfill requirements like appropriate refractive index, and serve as a nucleation layer to promote crystalline growth. Using μc-SiOx:H alloys we can enhance the optical band gap energy, adjust the refractive index over a considerable range, and dope the material p-type as well as n-type to make the material suitable for all these various tasks. The issues of stability against light induced degradation are also investigated. By using μc-SiOx:H doped layers, high efficiencies of 13.5% (initial) and 11.8% (stabilized) were achieved for tandem solar cells.
T2  - 30th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC-2014)
CY  - 22 Sep 2014 - 26 Sep 2014, Amsterdam (Netherlands)
Y2  - 22 Sep 2014 - 26 Sep 2014
M2  - Amsterdam, Netherlands
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/173140
ER  -