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@INPROCEEDINGS{Smirnov:173140,
      author       = {Smirnov, Vladimir and Lambertz, Andreas and Finger,
                      Friedhelm},
      title        = {{A}pplication of p- and n- {T}ype {M}icrocrystalline
                      {S}ilicon {O}xide (µc-{S}i{O}x:{H}) {A}lloys in {T}hin
                      {F}ilm {S}ilicon {S}ingle and {T}andem {J}unction {S}olar
                      {C}ells},
      reportid     = {FZJ-2014-06553},
      year         = {2014},
      abstract     = {We report on the development and application of p- and
                      n-type hydrogenated microcrystalline silicon oxide
                      (μc-SiOx:H) alloys in single and tandem junction thin film
                      silicon solar cells. Single junction amorphous (a-Si:H) and
                      microcrystalline silicon (μc-Si:H) solar cells are prepared
                      in p-i-n deposition sequence where the μc-SiOx:H films
                      serve as n-type layers, which helps to build up the electric
                      field in the diode and reduce parasitic absorption. In
                      tandem solar cells, consisting of amorphous (a-Si:H) and
                      microcrystalline (μc-Si:H) silicon sub-cells, silicon oxide
                      (μc-SiOx:H) layers are placed between the sub cells,
                      serving as an intermediate reflector (IR). Such IR layers
                      should additionally fulfill requirements like appropriate
                      refractive index, and serve as a nucleation layer to promote
                      crystalline growth. Using μc-SiOx:H alloys we can enhance
                      the optical band gap energy, adjust the refractive index
                      over a considerable range, and dope the material p-type as
                      well as n-type to make the material suitable for all these
                      various tasks. The issues of stability against light induced
                      degradation are also investigated. By using μc-SiOx:H doped
                      layers, high efficiencies of $13.5\%$ (initial) and $11.8\%$
                      (stabilized) were achieved for tandem solar cells.},
      month         = {Sep},
      date          = {2014-09-22},
      organization  = {30th European Photovoltaic Solar
                       Energy Conference and Exhibition (EU
                       PVSEC-2014), Amsterdam (Netherlands),
                       22 Sep 2014 - 26 Sep 2014},
      subtyp        = {Other},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {111 - Thin Film Photovoltaics (POF2-111)},
      pid          = {G:(DE-HGF)POF2-111},
      typ          = {PUB:(DE-HGF)6},
      url          = {https://juser.fz-juelich.de/record/173140},
}