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| Home > Publications database > Application of p- and n- Type Microcrystalline Silicon Oxide (µc-SiOx:H) Alloys in Thin Film Silicon Single and Tandem Junction Solar Cells > print |
| Home > Publications database > Application of p- and n- Type Microcrystalline Silicon Oxide (µc-SiOx:H) Alloys in Thin Film Silicon Single and Tandem Junction Solar Cells > print |
| 001 | 173140 | ||
| 005 | 20240708133635.0 | ||
| 037 | _ | _ | |a FZJ-2014-06553 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Smirnov, Vladimir |0 P:(DE-Juel1)130297 |b 0 |e Corresponding Author |u fzj |
| 111 | 2 | _ | |a 30th European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC-2014) |g EU PVSEC 2014 |c Amsterdam |d 2014-09-22 - 2014-09-26 |w Netherlands |
| 245 | _ | _ | |a Application of p- and n- Type Microcrystalline Silicon Oxide (µc-SiOx:H) Alloys in Thin Film Silicon Single and Tandem Junction Solar Cells |
| 260 | _ | _ | |c 2014 |
| 336 | 7 | _ | |a Conference Presentation |b conf |m conf |0 PUB:(DE-HGF)6 |s 1417795444_21918 |2 PUB:(DE-HGF) |x Other |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a Other |2 DataCite |
| 336 | 7 | _ | |a LECTURE_SPEECH |2 ORCID |
| 336 | 7 | _ | |a conferenceObject |2 DRIVER |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
| 520 | _ | _ | |a We report on the development and application of p- and n-type hydrogenated microcrystalline silicon oxide (μc-SiOx:H) alloys in single and tandem junction thin film silicon solar cells. Single junction amorphous (a-Si:H) and microcrystalline silicon (μc-Si:H) solar cells are prepared in p-i-n deposition sequence where the μc-SiOx:H films serve as n-type layers, which helps to build up the electric field in the diode and reduce parasitic absorption. In tandem solar cells, consisting of amorphous (a-Si:H) and microcrystalline (μc-Si:H) silicon sub-cells, silicon oxide (μc-SiOx:H) layers are placed between the sub cells, serving as an intermediate reflector (IR). Such IR layers should additionally fulfill requirements like appropriate refractive index, and serve as a nucleation layer to promote crystalline growth. Using μc-SiOx:H alloys we can enhance the optical band gap energy, adjust the refractive index over a considerable range, and dope the material p-type as well as n-type to make the material suitable for all these various tasks. The issues of stability against light induced degradation are also investigated. By using μc-SiOx:H doped layers, high efficiencies of 13.5% (initial) and 11.8% (stabilized) were achieved for tandem solar cells. |
| 536 | _ | _ | |a 111 - Thin Film Photovoltaics (POF2-111) |0 G:(DE-HGF)POF2-111 |c POF2-111 |f POF II |x 0 |
| 700 | 1 | _ | |a Lambertz, Andreas |0 P:(DE-Juel1)130263 |b 1 |u fzj |
| 700 | 1 | _ | |a Finger, Friedhelm |0 P:(DE-Juel1)130238 |b 2 |u fzj |
| 773 | _ | _ | |y 2014 |
| 909 | C | O | |o oai:juser.fz-juelich.de:173140 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)130297 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)130263 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)130238 |
| 913 | 2 | _ | |a DE-HGF |b Forschungsbereich Materie |l Forschungsbereich Materie |1 G:(DE-HGF)POF3-890 |0 G:(DE-HGF)POF3-899 |2 G:(DE-HGF)POF3-800 |v ohne Topic |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Energie |l Erneuerbare Energien |1 G:(DE-HGF)POF2-110 |0 G:(DE-HGF)POF2-111 |2 G:(DE-HGF)POF2-100 |v Thin Film Photovoltaics |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF2 |
| 914 | 1 | _ | |y 2014 |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)IEK-5-20101013 |k IEK-5 |l Photovoltaik |x 0 |
| 980 | _ | _ | |a conf |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)IEK-5-20101013 |
| 980 | _ | _ | |a UNRESTRICTED |
| 981 | _ | _ | |a I:(DE-Juel1)IMD-3-20101013 |
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