%0 Journal Article
%A Caspers, C.
%A Müller, M.
%A Gray, A. X.
%A Kaiser, A. M.
%A Gloskovskii, A.
%A Drube, W.
%A Fadley, C. S.
%A Schneider, C. M.
%T Electronic structure of EuO spin filter tunnel contacts directly on silicon
%J Physica status solidi / Rapid research letters
%V 5
%@ 1862-6270
%C Weinheim
%I Wiley-VCH
%M PreJuSER-17479
%P 441 - 443
%D 2011
%Z M.M. acknowledges financial support by DFG under grant MU 3160/1-1. This work was supported by BMBF under contracts 813405-8 WW3 and 05K10CHB.
%X We present an electronic structure study of a magnetic oxide/semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices.A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO "spin filter" tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices.[GRAPHICS]Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000298038600010
%R 10.1002/pssr.201105403
%U https://juser.fz-juelich.de/record/17479