Journal Article

PreJuSER-17479

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electronic structure of EuO spin filter tunnel contacts directly on silicon

Caspers, C.FZJ* ; Müller, M.FZJ* ; Gray, A. X.FZJ* ; Kaiser, A. M.FZJ* ; Gloskovskii, A.FZJ* ; Drube, W.FZJ* ; Fadley, C. S.FZJ* ; Schneider, C. M.FZJ*

2011
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/pssr.201105403

Abstract: We present an electronic structure study of a magnetic oxide/semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices.A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO "spin filter" tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices.[GRAPHICS]Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keyword(s): J ; magnetic materials (auto) ; EuO (auto) ; X-ray photoemission spectra (auto) ; spin injection (auto) ; silicon (auto)

Note: M.M. acknowledges financial support by DFG under grant MU 3160/1-1. This work was supported by BMBF under contracts 813405-8 WW3 and 05K10CHB.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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