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000017479 0247_ $$2DOI$$a10.1002/pssr.201105403
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000017479 041__ $$aeng
000017479 082__ $$a530
000017479 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000017479 084__ $$2WoS$$aPhysics, Applied
000017479 084__ $$2WoS$$aPhysics, Condensed Matter
000017479 1001_ $$0P:(DE-Juel1)VDB95994$$aCaspers, C.$$b0$$uFZJ
000017479 245__ $$aElectronic structure of EuO spin filter tunnel contacts directly on silicon
000017479 260__ $$aWeinheim$$bWiley-VCH$$c2011
000017479 300__ $$a441 - 443
000017479 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
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000017479 440_0 $$025084$$aPhysica Status Solidi-Rapid Research Letters$$v5$$y12
000017479 500__ $$3POF3_Assignment on 2016-02-29
000017479 500__ $$aM.M. acknowledges financial support by DFG under grant MU 3160/1-1. This work was supported by BMBF under contracts 813405-8 WW3 and 05K10CHB.
000017479 520__ $$aWe present an electronic structure study of a magnetic oxide/semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices.A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO "spin filter" tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices.[GRAPHICS]Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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000017479 65320 $$2Author$$amagnetic materials
000017479 65320 $$2Author$$aEuO
000017479 65320 $$2Author$$aX-ray photoemission spectra
000017479 65320 $$2Author$$aspin injection
000017479 65320 $$2Author$$asilicon
000017479 650_7 $$2WoSType$$aJ
000017479 7001_ $$0P:(DE-Juel1)VDB1106$$aMüller, M.$$b1$$uFZJ
000017479 7001_ $$0P:(DE-Juel1)VDB102206$$aGray, A. X.$$b2$$uFZJ
000017479 7001_ $$0P:(DE-Juel1)VDB101972$$aKaiser, A. M.$$b3$$uFZJ
000017479 7001_ $$0P:(DE-Juel1)VDB47217$$aGloskovskii, A.$$b4$$uFZJ
000017479 7001_ $$0P:(DE-Juel1)VDB102207$$aDrube, W.$$b5$$uFZJ
000017479 7001_ $$0P:(DE-Juel1)VDB101984$$aFadley, C. S.$$b6$$uFZJ
000017479 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C. M.$$b7$$uFZJ
000017479 773__ $$0PERI:(DE-600)2259465-6$$a10.1002/pssr.201105403$$gVol. 5, p. 441 - 443$$p441 - 443$$q5<441 - 443$$tPhysica status solidi / Rapid research letters$$v5$$x1862-6270$$y2011
000017479 8567_ $$uhttp://dx.doi.org/10.1002/pssr.201105403
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000017479 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000017479 915__ $$0StatID:(DE-HGF)0020$$aNo peer review
000017479 9141_ $$y2011
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