TY  - JOUR
AU  - Caspers, C.
AU  - Müller, M.
AU  - Gray, A. X.
AU  - Kaiser, A. M.
AU  - Gloskovskii, A.
AU  - Drube, W.
AU  - Fadley, C. S.
AU  - Schneider, C. M.
TI  - Electronic structure of EuO spin filter tunnel contacts directly on silicon
JO  - Physica status solidi / Rapid research letters
VL  - 5
SN  - 1862-6270
CY  - Weinheim
PB  - Wiley-VCH
M1  - PreJuSER-17479
SP  - 441 - 443
PY  - 2011
N1  - M.M. acknowledges financial support by DFG under grant MU 3160/1-1. This work was supported by BMBF under contracts 813405-8 WW3 and 05K10CHB.
AB  - We present an electronic structure study of a magnetic oxide/semiconductor model system, EuO on silicon, which is dedicated for efficient spin injection and spin detection in silicon-based spintronics devices.A combined electronic structure analysis of Eu core levels and valence bands using hard X-ray photoemission spectroscopy was performed to quantify the nearly ideal stoichiometry of EuO "spin filter" tunnel barriers directly on silicon, and the absence of silicon oxide at the EuO/Si interface. These results provide evidence for the successful integration of a magnetic oxide tunnel barrier with silicon, paving the way for the future integration of magnetic oxides into functional spintronics devices.[GRAPHICS]Hard X-ray photoemission spectroscopy of an Al/EuO/Si heterostructure probing the buried EuO and EuO/Si interface. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
KW  - J (WoSType)
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000298038600010
DO  - DOI:10.1002/pssr.201105403
UR  - https://juser.fz-juelich.de/record/17479
ER  -