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@ARTICLE{Caspers:17479,
      author       = {Caspers, C. and Müller, M. and Gray, A. X. and Kaiser, A.
                      M. and Gloskovskii, A. and Drube, W. and Fadley, C. S. and
                      Schneider, C. M.},
      title        = {{E}lectronic structure of {E}u{O} spin filter tunnel
                      contacts directly on silicon},
      journal      = {Physica status solidi / Rapid research letters},
      volume       = {5},
      issn         = {1862-6270},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {PreJuSER-17479},
      pages        = {441 - 443},
      year         = {2011},
      note         = {M.M. acknowledges financial support by DFG under grant MU
                      3160/1-1. This work was supported by BMBF under contracts
                      813405-8 WW3 and 05K10CHB.},
      abstract     = {We present an electronic structure study of a magnetic
                      oxide/semiconductor model system, EuO on silicon, which is
                      dedicated for efficient spin injection and spin detection in
                      silicon-based spintronics devices.A combined electronic
                      structure analysis of Eu core levels and valence bands using
                      hard X-ray photoemission spectroscopy was performed to
                      quantify the nearly ideal stoichiometry of EuO "spin filter"
                      tunnel barriers directly on silicon, and the absence of
                      silicon oxide at the EuO/Si interface. These results provide
                      evidence for the successful integration of a magnetic oxide
                      tunnel barrier with silicon, paving the way for the future
                      integration of magnetic oxides into functional spintronics
                      devices.[GRAPHICS]Hard X-ray photoemission spectroscopy of
                      an Al/EuO/Si heterostructure probing the buried EuO and
                      EuO/Si interface. (C) 2011 WILEY-VCH Verlag GmbH $\&$ Co.
                      KGaA, Weinheim},
      keywords     = {J (WoSType)},
      cin          = {PGI-6},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-6-20110106},
      pnm          = {Grundlagen für zukünftige Informationstechnologien},
      pid          = {G:(DE-Juel1)FUEK412},
      shelfmark    = {Materials Science, Multidisciplinary / Physics, Applied /
                      Physics, Condensed Matter},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000298038600010},
      doi          = {10.1002/pssr.201105403},
      url          = {https://juser.fz-juelich.de/record/17479},
}