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000017480 084__ $$2WoS$$aEngineering, Electrical & Electronic
000017480 084__ $$2WoS$$aPhysics, Applied
000017480 1001_ $$0P:(DE-Juel1)VDB1106$$aMüller, M.$$b0$$uFZJ
000017480 245__ $$aControlling magnetic properties of EuS-based spin valve structures on Si(001)
000017480 260__ $$aNew York, NY$$bIEEE$$c2011
000017480 300__ $$a1635 - 1638
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000017480 440_0 $$017401$$aIEEE Transactions on Magnetics$$v47$$x0018-9464$$y6
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000017480 500__ $$aThe work of M. Muller was supported by Deutsche Forschungsgemeinschaft (DFG) under Grant MU 3160/1-1.
000017480 520__ $$aWe report on the growth and magnetic characterization of the ferromagnetic insulator Europium Sulfide (EuS) on (001)-oriented Silicon substrates. The influence of the EuS film thickness on the coercive field and Curie temperature was systematically investigated with regard to a potential application of thin EuS films as spin filter tunnel barriers. In a further step, we fabricated EuS/Si(001) spin valve structures with both ferromagnetic Gd and exchange-biased CoO/Co counter electrodes. An independent magnetic switching of the EuS barrier and the ferromagnetic layers was accomplished by eliminating intermediate magnetic exchange couplings. Our results clearly demonstrate the feasibility to employ thin EuS ferromagnetic insulator films as spin filter tunnel barriers on Silicon(001) in spin valve structures for future magnetotransport experiments.
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000017480 65320 $$2Author$$aEuropium chalcogenides
000017480 65320 $$2Author$$aferromagnetic insulators
000017480 65320 $$2Author$$aspin-electronics
000017480 65320 $$2Author$$aspin filter tunneling
000017480 650_7 $$2WoSType$$aJ
000017480 7001_ $$0P:(DE-Juel1)VDB1468$$aSchreiber, R.$$b1$$uFZJ
000017480 7001_ $$0P:(DE-Juel1)130948$$aSchneider, C.M.$$b2$$uFZJ
000017480 773__ $$0PERI:(DE-600)2025397-7$$a10.1109/TMAG.2011.2106767$$gVol. 47, p. 1635 - 1638$$p1635 - 1638$$q47<1635 - 1638$$tIEEE transactions on magnetics$$v47$$x0018-9464$$y2011
000017480 8567_ $$uhttp://dx.doi.org/10.1109/TMAG.2011.2106767
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