Journal Article

PreJuSER-17480

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Controlling magnetic properties of EuS-based spin valve structures on Si(001)

Müller, M.FZJ* ; Schreiber, R.FZJ* ; Schneider, C. M.FZJ*

2011
IEEE New York, NY

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Please use a persistent id in citations: doi:10.1109/TMAG.2011.2106767

Abstract: We report on the growth and magnetic characterization of the ferromagnetic insulator Europium Sulfide (EuS) on (001)-oriented Silicon substrates. The influence of the EuS film thickness on the coercive field and Curie temperature was systematically investigated with regard to a potential application of thin EuS films as spin filter tunnel barriers. In a further step, we fabricated EuS/Si(001) spin valve structures with both ferromagnetic Gd and exchange-biased CoO/Co counter electrodes. An independent magnetic switching of the EuS barrier and the ferromagnetic layers was accomplished by eliminating intermediate magnetic exchange couplings. Our results clearly demonstrate the feasibility to employ thin EuS ferromagnetic insulator films as spin filter tunnel barriers on Silicon(001) in spin valve structures for future magnetotransport experiments.

Keyword(s): J ; Europium chalcogenides (auto) ; ferromagnetic insulators (auto) ; spin-electronics (auto) ; spin filter tunneling (auto)

Note: The work of M. Muller was supported by Deutsche Forschungsgemeinschaft (DFG) under Grant MU 3160/1-1.

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Contributing Institute(s):

1. Elektronische Eigenschaften (PGI-6)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2011

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