TY  - JOUR
AU  - Tran, Duy P.
AU  - Macdonald, Thomas J.
AU  - Wolfrum, Bernhard
AU  - Stockmann, Regina
AU  - Nann, Thomas
AU  - Offenhäusser, Andreas
AU  - Thierry, Benjamin
TI  - Photoresponsive properties of ultrathin silicon nanowires
JO  - Applied physics letters
VL  - 105
IS  - 23
SN  - 1077-3118
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2014-06917
SP  - 231116 
PY  - 2014
AB  - Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate the photoresponse properties of ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography and tetramethylammonium hydroxide wet-etching. The high-quality SiNWs were able to detect light from the UV to the visible range with excellent sensitivity (∼1 pW/array), good time response, and high photoresponsivity (R ∼ 2.5 × 104 A/W). Improvement of the ultrathin SiNWs' photoresponse has been observed in comparison to 40 nm counter-part nanowires. These properties are attributable to the predominance surface-effect due to the high surface-to-volume ratio of ultrathin SiNWs. Long-term measurements at different temperatures in both the forward and reverse bias directions demonstrated the stability and reliability of the fabricated device. By sensitizing the fabricated SiNW arrays with cadmium telluride quantum dots (QDs), hybrid QD SiNW devices displayed an improvement in photocurrent response under UV light, while preserving their performance in the visible light range. The fast, stable, and high photoresponse of these hybrid nanostructures is promising towards the development of optoelectronic and photovoltaic devices
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000346266000016
DO  - DOI:10.1063/1.4904089
UR  - https://juser.fz-juelich.de/record/185490
ER  -