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@ARTICLE{Tran:185490,
      author       = {Tran, Duy P. and Macdonald, Thomas J. and Wolfrum, Bernhard
                      and Stockmann, Regina and Nann, Thomas and Offenhäusser,
                      Andreas and Thierry, Benjamin},
      title        = {{P}hotoresponsive properties of ultrathin silicon
                      nanowires},
      journal      = {Applied physics letters},
      volume       = {105},
      number       = {23},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2014-06917},
      pages        = {231116},
      year         = {2014},
      abstract     = {Functional silicon nanowires (SiNWs) are promising building
                      blocks in the design of highly sensitive photodetectors and
                      bio-chemical sensors. We systematically investigate the
                      photoresponse properties of ultrathin SiNWs (20 nm)
                      fabricated using a size-reduction method based on e-beam
                      lithography and tetramethylammonium hydroxide wet-etching.
                      The high-quality SiNWs were able to detect light from the UV
                      to the visible range with excellent sensitivity (∼1
                      pW/array), good time response, and high photoresponsivity
                      (R ∼ 2.5 × 104 A/W). Improvement of the
                      ultrathin SiNWs' photoresponse has been observed in
                      comparison to 40 nm counter-part nanowires. These
                      properties are attributable to the predominance
                      surface-effect due to the high surface-to-volume ratio of
                      ultrathin SiNWs. Long-term measurements at different
                      temperatures in both the forward and reverse bias directions
                      demonstrated the stability and reliability of the fabricated
                      device. By sensitizing the fabricated SiNW arrays with
                      cadmium telluride quantum dots (QDs), hybrid QD SiNW devices
                      displayed an improvement in photocurrent response under UV
                      light, while preserving their performance in the visible
                      light range. The fast, stable, and high photoresponse of
                      these hybrid nanostructures is promising towards the
                      development of optoelectronic and photovoltaic devices},
      cin          = {PGI-8 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-8-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {423 - Sensorics and bioinspired systems (POF2-423)},
      pid          = {G:(DE-HGF)POF2-423},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000346266000016},
      doi          = {10.1063/1.4904089},
      url          = {https://juser.fz-juelich.de/record/185490},
}