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000186411 1001_ $$0P:(DE-HGF)0$$avan den Hurk, Jan$$b0$$eCorresponding Author
000186411 245__ $$aVolatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches
000186411 260__ $$aBristol$$bIOP Publ.$$c2014
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000186411 520__ $$aRedox-based resistive memory cells exhibit changes of OFF or intermediate resistance values over time and even ON states can be completely lost in certain cases. The stability of these resistance states and the time until resistance loss strongly depends on the materials system. On the basis of electrical measurements and chemical analysis we found a viable explanation for these volatile resistance states (VRSs) in Ag-GeSx-based electrochemical metallization memory cells and identified a technological application in the field of crossbar memories. Complementary resistive switches usually suffer from the necessity of a destructive read-out procedure increasing wear and reducing read-out speed. From our analysis we deduced a solution to use the VRS as an inherent selector mechanism without the need for additional selector devices.
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000186411 7001_ $$0P:(DE-HGF)0$$aLinn, Eike$$b1
000186411 7001_ $$0P:(DE-Juel1)156365$$aZhang, Hehe$$b2$$ufzj
000186411 7001_ $$0P:(DE-HGF)0$$aWaser, Rainer$$b3
000186411 7001_ $$0P:(DE-Juel1)131014$$aValov, Ilia$$b4$$ufzj
000186411 773__ $$0PERI:(DE-600)1362365-5$$a10.1088/0957-4484/25/42/425202$$gVol. 25, no. 42, p. 425202 -$$n42$$p425202 -$$tNanotechnology$$v25$$x1361-6528$$y2014
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