Journal Article

FZJ-2015-00487

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Volatile resistance states in electrochemical metallization cells enabling non-destructive readout of complementary resistive switches

van den Hurk, J. (Corresponding Author) ; Linn, E. ; Zhang, H.FZJ* ; Waser, R.FZJ* ; Valov, I.FZJ*

2014
IOP Publ. Bristol

This record in other databases:  

Please use a persistent id in citations: doi:10.1088/0957-4484/25/42/425202

Abstract: Redox-based resistive memory cells exhibit changes of OFF or intermediate resistance values over time and even ON states can be completely lost in certain cases. The stability of these resistance states and the time until resistance loss strongly depends on the materials system. On the basis of electrical measurements and chemical analysis we found a viable explanation for these volatile resistance states (VRSs) in Ag-GeSx-based electrochemical metallization memory cells and identified a technological application in the field of crossbar memories. Complementary resistive switches usually suffer from the necessity of a destructive read-out procedure increasing wear and reducing read-out speed. From our analysis we deduced a solution to use the VRS as an inherent selector mechanism without the need for additional selector devices.

---

Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

---

Database coverage:
; Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

---