Journal Article

FZJ-2015-00694

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Atomic Layer Deposition of TiO x /Al 2 O 3 Bilayer Structures for Resistive Switching Memory Applications

Zhang, H.FZJ* ; Aslam, N.FZJ* ; Reiners, M. ; Waser, R.FZJ* ; Hoffmann-Eifert, S. (Corresponding Author)FZJ*

2014
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/cvde.201407123

Abstract: The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post-annealing step. Stoichiometric Al2O3 and oxygen-deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis-dimethlyamido-titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as-grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen-deficient TiOx shows semiconducting behavior. The bipolar-type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 424 - Exploratory materials and phenomena (POF2-424) (POF2-424)

Appears in the scientific report 2014

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Database coverage:
Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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