%0 Journal Article
%A Singh, Trilok
%A Wang, Shuangzhou
%A Aslam, Nabeel
%A Zhang, Hehe
%A Hoffmann-Eifert, Susanne
%A Mathur, Sanjay
%T Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications
%J Chemical vapor deposition
%V 20
%N 7-8-9
%@ 0948-1907
%C Weinheim
%I Wiley-VCH
%M FZJ-2015-00695
%P 291 - 297
%D 2014
%X Atomic layer deposition (ALD) offers nearly pinhole-free, conformal, and with good thickness control, metal oxide nanometric thin films required for next-generation memory devices. Here we report on the ALD of VOx thin films grown at about 100°C from a vanadium tri-isopropoxide (VTIP) precursor, with water as the co-reactant, followed by their post-growth treatments, for potential applications in resistive switching (RS) devices. As-grown VOx films are amorphous, and transform into polycrystalline layers upon annealing. Capacitor structures fabricated from amorphous VOx films show current-voltage (I-V) characteristics, interesting for RS applications. Depending on the electroforming conditions, bipolar-type memory switching with a resistance ratio ROFF/RON > 103 is obtained, as well as a combination of memory and threshold switching. The latter is attractive for its highly non-linear I-V characteristics, which is attributed to the temperature-induced insulator-to-metal transition (IMT) in vanadium dioxide.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000342069800013
%R 10.1002/cvde.201407122
%U https://juser.fz-juelich.de/record/186622