Journal Article

FZJ-2015-00695

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications

Singh, T. ; Wang, S. ; Aslam, N.FZJ* ; Zhang, H.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Mathur, S. (Corresponding Author)

2014
Wiley-VCH Weinheim

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Please use a persistent id in citations: doi:10.1002/cvde.201407122

Abstract: Atomic layer deposition (ALD) offers nearly pinhole-free, conformal, and with good thickness control, metal oxide nanometric thin films required for next-generation memory devices. Here we report on the ALD of VOx thin films grown at about 100°C from a vanadium tri-isopropoxide (VTIP) precursor, with water as the co-reactant, followed by their post-growth treatments, for potential applications in resistive switching (RS) devices. As-grown VOx films are amorphous, and transform into polycrystalline layers upon annealing. Capacitor structures fabricated from amorphous VOx films show current-voltage (I-V) characteristics, interesting for RS applications. Depending on the electroforming conditions, bipolar-type memory switching with a resistance ratio ROFF/RON > 103 is obtained, as well as a combination of memory and threshold switching. The latter is attractive for its highly non-linear I-V characteristics, which is attributed to the temperature-induced insulator-to-metal transition (IMT) in vanadium dioxide.

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Contributing Institute(s):

1. Elektronische Materialien (PGI-7)

Research Program(s):

1. 424 - Exploratory materials and phenomena (POF2-424) (POF2-424)

Appears in the scientific report 2014

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Database coverage:
Current Contents - Engineering, Computing and Technology ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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