000186622 001__ 186622
000186622 005__ 20210129214927.0
000186622 0247_ $$2doi$$a10.1002/cvde.201407122
000186622 0247_ $$2ISSN$$a0948-1907
000186622 0247_ $$2ISSN$$a1521-3862
000186622 0247_ $$2WOS$$aWOS:000342069800013
000186622 037__ $$aFZJ-2015-00695
000186622 082__ $$a540
000186622 1001_ $$0P:(DE-HGF)0$$aSingh, Trilok$$b0
000186622 245__ $$aAtomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications
000186622 260__ $$aWeinheim$$bWiley-VCH$$c2014
000186622 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1421908347_13053
000186622 3367_ $$2DataCite$$aOutput Types/Journal article
000186622 3367_ $$00$$2EndNote$$aJournal Article
000186622 3367_ $$2BibTeX$$aARTICLE
000186622 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000186622 3367_ $$2DRIVER$$aarticle
000186622 520__ $$aAtomic layer deposition (ALD) offers nearly pinhole-free, conformal, and with good thickness control, metal oxide nanometric thin films required for next-generation memory devices. Here we report on the ALD of VOx thin films grown at about 100°C from a vanadium tri-isopropoxide (VTIP) precursor, with water as the co-reactant, followed by their post-growth treatments, for potential applications in resistive switching (RS) devices. As-grown VOx films are amorphous, and transform into polycrystalline layers upon annealing. Capacitor structures fabricated from amorphous VOx films show current-voltage (I-V) characteristics, interesting for RS applications. Depending on the electroforming conditions, bipolar-type memory switching with a resistance ratio ROFF/RON > 103 is obtained, as well as a combination of memory and threshold switching. The latter is attractive for its highly non-linear I-V characteristics, which is attributed to the temperature-induced insulator-to-metal transition (IMT) in vanadium dioxide.
000186622 536__ $$0G:(DE-HGF)POF2-424$$a424 - Exploratory materials and phenomena (POF2-424)$$cPOF2-424$$fPOF II$$x0
000186622 588__ $$aDataset connected to CrossRef, juser.fz-juelich.de
000186622 7001_ $$0P:(DE-HGF)0$$aWang, Shuangzhou$$b1
000186622 7001_ $$0P:(DE-Juel1)140489$$aAslam, Nabeel$$b2
000186622 7001_ $$0P:(DE-Juel1)156365$$aZhang, Hehe$$b3$$ufzj
000186622 7001_ $$0P:(DE-Juel1)130717$$aHoffmann-Eifert, Susanne$$b4
000186622 7001_ $$0P:(DE-HGF)0$$aMathur, Sanjay$$b5$$eCorresponding Author
000186622 773__ $$0PERI:(DE-600)1477693-5$$a10.1002/cvde.201407122$$gVol. 20, no. 7-8-9, p. 291 - 297$$n7-8-9$$p291 - 297$$tChemical vapor deposition$$v20$$x0948-1907$$y2014
000186622 909CO $$ooai:juser.fz-juelich.de:186622$$pVDB
000186622 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)140489$$aForschungszentrum Jülich GmbH$$b2$$kFZJ
000186622 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)156365$$aForschungszentrum Jülich GmbH$$b3$$kFZJ
000186622 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130717$$aForschungszentrum Jülich GmbH$$b4$$kFZJ
000186622 9132_ $$0G:(DE-HGF)POF3-524$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Collective States$$x0
000186622 9131_ $$0G:(DE-HGF)POF2-424$$1G:(DE-HGF)POF2-420$$2G:(DE-HGF)POF2-400$$3G:(DE-HGF)POF2$$4G:(DE-HGF)POF$$aDE-HGF$$bSchlüsseltechnologien$$lGrundlagen zukünftiger Informationstechnologien$$vExploratory materials and phenomena$$x0
000186622 9141_ $$y2014
000186622 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR
000186622 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000186622 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000186622 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000186622 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000186622 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000186622 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000186622 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000186622 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000186622 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF <  5
000186622 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000186622 980__ $$ajournal
000186622 980__ $$aVDB
000186622 980__ $$aI:(DE-Juel1)PGI-7-20110106
000186622 980__ $$aUNRESTRICTED