TY  - JOUR
AU  - Singh, Trilok
AU  - Wang, Shuangzhou
AU  - Aslam, Nabeel
AU  - Zhang, Hehe
AU  - Hoffmann-Eifert, Susanne
AU  - Mathur, Sanjay
TI  - Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications
JO  - Chemical vapor deposition
VL  - 20
IS  - 7-8-9
SN  - 0948-1907
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2015-00695
SP  - 291 - 297
PY  - 2014
AB  - Atomic layer deposition (ALD) offers nearly pinhole-free, conformal, and with good thickness control, metal oxide nanometric thin films required for next-generation memory devices. Here we report on the ALD of VOx thin films grown at about 100°C from a vanadium tri-isopropoxide (VTIP) precursor, with water as the co-reactant, followed by their post-growth treatments, for potential applications in resistive switching (RS) devices. As-grown VOx films are amorphous, and transform into polycrystalline layers upon annealing. Capacitor structures fabricated from amorphous VOx films show current-voltage (I-V) characteristics, interesting for RS applications. Depending on the electroforming conditions, bipolar-type memory switching with a resistance ratio ROFF/RON > 103 is obtained, as well as a combination of memory and threshold switching. The latter is attractive for its highly non-linear I-V characteristics, which is attributed to the temperature-induced insulator-to-metal transition (IMT) in vanadium dioxide.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000342069800013
DO  - DOI:10.1002/cvde.201407122
UR  - https://juser.fz-juelich.de/record/186622
ER  -