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@ARTICLE{Singh:186622,
      author       = {Singh, Trilok and Wang, Shuangzhou and Aslam, Nabeel and
                      Zhang, Hehe and Hoffmann-Eifert, Susanne and Mathur, Sanjay},
      title        = {{A}tomic {L}ayer {D}eposition of {T}ransparent {VO} $_{x}$
                      {T}hin {F}ilms for {R}esistive {S}witching {A}pplications},
      journal      = {Chemical vapor deposition},
      volume       = {20},
      number       = {7-8-9},
      issn         = {0948-1907},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-00695},
      pages        = {291 - 297},
      year         = {2014},
      abstract     = {Atomic layer deposition (ALD) offers nearly pinhole-free,
                      conformal, and with good thickness control, metal oxide
                      nanometric thin films required for next-generation memory
                      devices. Here we report on the ALD of VOx thin films grown
                      at about 100°C from a vanadium tri-isopropoxide (VTIP)
                      precursor, with water as the co-reactant, followed by their
                      post-growth treatments, for potential applications in
                      resistive switching (RS) devices. As-grown VOx films are
                      amorphous, and transform into polycrystalline layers upon
                      annealing. Capacitor structures fabricated from amorphous
                      VOx films show current-voltage (I-V) characteristics,
                      interesting for RS applications. Depending on the
                      electroforming conditions, bipolar-type memory switching
                      with a resistance ratio ROFF/RON > 103 is obtained, as
                      well as a combination of memory and threshold switching. The
                      latter is attractive for its highly non-linear I-V
                      characteristics, which is attributed to the
                      temperature-induced insulator-to-metal transition (IMT) in
                      vanadium dioxide.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {424 - Exploratory materials and phenomena (POF2-424)},
      pid          = {G:(DE-HGF)POF2-424},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000342069800013},
      doi          = {10.1002/cvde.201407122},
      url          = {https://juser.fz-juelich.de/record/186622},
}