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| Hauptseite > Publikationsdatenbank > Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications > print |
| Hauptseite > Publikationsdatenbank > Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications > print |
| 001 | 186622 | ||
| 005 | 20210129214927.0 | ||
| 024 | 7 | _ | |a 10.1002/cvde.201407122 |2 doi |
| 024 | 7 | _ | |a 0948-1907 |2 ISSN |
| 024 | 7 | _ | |a 1521-3862 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2015-00695 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Singh, Trilok |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a Atomic Layer Deposition of Transparent VO $_{x}$ Thin Films for Resistive Switching Applications |
| 260 | _ | _ | |a Weinheim |c 2014 |b Wiley-VCH |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1421908347_13053 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a Atomic layer deposition (ALD) offers nearly pinhole-free, conformal, and with good thickness control, metal oxide nanometric thin films required for next-generation memory devices. Here we report on the ALD of VOx thin films grown at about 100°C from a vanadium tri-isopropoxide (VTIP) precursor, with water as the co-reactant, followed by their post-growth treatments, for potential applications in resistive switching (RS) devices. As-grown VOx films are amorphous, and transform into polycrystalline layers upon annealing. Capacitor structures fabricated from amorphous VOx films show current-voltage (I-V) characteristics, interesting for RS applications. Depending on the electroforming conditions, bipolar-type memory switching with a resistance ratio ROFF/RON > 103 is obtained, as well as a combination of memory and threshold switching. The latter is attractive for its highly non-linear I-V characteristics, which is attributed to the temperature-induced insulator-to-metal transition (IMT) in vanadium dioxide. |
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| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Wang, Shuangzhou |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Aslam, Nabeel |0 P:(DE-Juel1)140489 |b 2 |
| 700 | 1 | _ | |a Zhang, Hehe |0 P:(DE-Juel1)156365 |b 3 |u fzj |
| 700 | 1 | _ | |a Hoffmann-Eifert, Susanne |0 P:(DE-Juel1)130717 |b 4 |
| 700 | 1 | _ | |a Mathur, Sanjay |0 P:(DE-HGF)0 |b 5 |e Corresponding Author |
| 773 | _ | _ | |a 10.1002/cvde.201407122 |g Vol. 20, no. 7-8-9, p. 291 - 297 |0 PERI:(DE-600)1477693-5 |n 7-8-9 |p 291 - 297 |t Chemical vapor deposition |v 20 |y 2014 |x 0948-1907 |
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