%0 Journal Article
%A Wencka, M.
%A Jazbec, S.
%A Jagli, Z.
%A Vrtnik, M.
%A Feuerbacher, M.
%A Heggen, M.
%A Roitsch, S.
%A Dolinsek, J.
%T Electrical resistivity of the u-Al4Mn giant-unit-cell complex metallic alloy
%J Philosophical magazine  / A
%V 91
%@ 0141-8610
%C London [u.a.]
%I Taylor and Francis
%M PreJuSER-18702
%D 2011
%Z This work was performed within the 6th Framework EU Network of Excellence "Complex Metallic Alloys" (Contract No. NMP3-CT-2005-500140). J.D. acknowledges support from the Centre of Excellence EN -> FIST, Dunajska 156, SI-1000 Ljubljana, Slovenia.
%X The mu-Al4Mn complex intermetallic phase with 563 atoms in its giant unit cell exhibits a complicated temperature dependence of electrical resistivity that has a broad maximum at about 175 K and a minimum at 13 K. The temperature dependence of the resistivity was reproduced by employing the theory of quantum transport of slow charge carriers, which predicts a crossover from the metallic (Boltzmann-type) positive-temperature-coefficient electrical resistivity at low temperatures to the insulator-like (non-Boltzmann) negative-temperature-coefficient resistivity at elevated temperatures. The low-temperature resistivity minimum was reproduced by considering it as a magnetic effect due to increased scattering of the conduction electrons by the Mn spins on approaching the spin glass phase that develops below the spin freezing temperature T-f = 2.7 K.
%K J (WoSType)
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000290670100041
%R 10.1080/14786435.2010.512578
%U https://juser.fz-juelich.de/record/18702