Journal Article

PreJuSER-18702

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Electrical resistivity of the u-Al4Mn giant-unit-cell complex metallic alloy

Wencka, M. ; Jazbec, S. ; Jagli, Z. ; Vrtnik, M. ; Feuerbacher, M.FZJ* ; Heggen, M.FZJ* ; Roitsch, S.FZJ* ; Dolinsek, J.

2011
Taylor and Francis London [u.a.]

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Please use a persistent id in citations: doi:10.1080/14786435.2010.512578

Abstract: The mu-Al4Mn complex intermetallic phase with 563 atoms in its giant unit cell exhibits a complicated temperature dependence of electrical resistivity that has a broad maximum at about 175 K and a minimum at 13 K. The temperature dependence of the resistivity was reproduced by employing the theory of quantum transport of slow charge carriers, which predicts a crossover from the metallic (Boltzmann-type) positive-temperature-coefficient electrical resistivity at low temperatures to the insulator-like (non-Boltzmann) negative-temperature-coefficient resistivity at elevated temperatures. The low-temperature resistivity minimum was reproduced by considering it as a magnetic effect due to increased scattering of the conduction electrons by the Mn spins on approaching the spin glass phase that develops below the spin freezing temperature T-f = 2.7 K.

Keyword(s): J ; complex metallic alloy (auto) ; electrical resistivity (auto) ; Al-Mn system (auto) ; magnetic susceptibility (auto) ; spin glass (auto)

Note: This work was performed within the 6th Framework EU Network of Excellence "Complex Metallic Alloys" (Contract No. NMP3-CT-2005-500140). J.D. acknowledges support from the Centre of Excellence EN -> FIST, Dunajska 156, SI-1000 Ljubljana, Slovenia.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. Kondensierte Materie (P54)

Appears in the scientific report 2011

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