000018702 001__ 18702
000018702 005__ 20240610120735.0
000018702 0247_ $$2DOI$$a10.1080/14786435.2010.512578
000018702 0247_ $$2WOS$$aWOS:000290670100041
000018702 037__ $$aPreJuSER-18702
000018702 041__ $$aeng
000018702 082__ $$a530
000018702 084__ $$2WoS$$aMaterials Science, Multidisciplinary
000018702 084__ $$2WoS$$aMechanics
000018702 084__ $$2WoS$$aMetallurgy & Metallurgical Engineering
000018702 084__ $$2WoS$$aPhysics, Applied
000018702 084__ $$2WoS$$aPhysics, Condensed Matter
000018702 1001_ $$0P:(DE-HGF)0$$aWencka, M.$$b0
000018702 245__ $$aElectrical resistivity of the u-Al4Mn giant-unit-cell complex metallic alloy
000018702 260__ $$aLondon [u.a.]$$bTaylor and Francis$$c2011
000018702 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article
000018702 3367_ $$2DataCite$$aOutput Types/Journal article
000018702 3367_ $$00$$2EndNote$$aJournal Article
000018702 3367_ $$2BibTeX$$aARTICLE
000018702 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000018702 3367_ $$2DRIVER$$aarticle
000018702 440_0 $$011501$$aPhilosophical Magazine$$v91$$x0141-8610$$y19
000018702 500__ $$3POF3_Assignment on 2016-02-29
000018702 500__ $$aThis work was performed within the 6th Framework EU Network of Excellence "Complex Metallic Alloys" (Contract No. NMP3-CT-2005-500140). J.D. acknowledges support from the Centre of Excellence EN -> FIST, Dunajska 156, SI-1000 Ljubljana, Slovenia.
000018702 520__ $$aThe mu-Al4Mn complex intermetallic phase with 563 atoms in its giant unit cell exhibits a complicated temperature dependence of electrical resistivity that has a broad maximum at about 175 K and a minimum at 13 K. The temperature dependence of the resistivity was reproduced by employing the theory of quantum transport of slow charge carriers, which predicts a crossover from the metallic (Boltzmann-type) positive-temperature-coefficient electrical resistivity at low temperatures to the insulator-like (non-Boltzmann) negative-temperature-coefficient resistivity at elevated temperatures. The low-temperature resistivity minimum was reproduced by considering it as a magnetic effect due to increased scattering of the conduction electrons by the Mn spins on approaching the spin glass phase that develops below the spin freezing temperature T-f = 2.7 K.
000018702 536__ $$0G:(DE-Juel1)FUEK414$$2G:(DE-HGF)$$aKondensierte Materie$$cP54$$x0
000018702 588__ $$aDataset connected to Web of Science
000018702 65320 $$2Author$$acomplex metallic alloy
000018702 65320 $$2Author$$aelectrical resistivity
000018702 65320 $$2Author$$aAl-Mn system
000018702 65320 $$2Author$$amagnetic susceptibility
000018702 65320 $$2Author$$aspin glass
000018702 650_7 $$2WoSType$$aJ
000018702 7001_ $$0P:(DE-HGF)0$$aJazbec, S.$$b1
000018702 7001_ $$0P:(DE-HGF)0$$aJagli, Z.$$b2
000018702 7001_ $$0P:(DE-HGF)0$$aVrtnik, M.$$b3
000018702 7001_ $$0P:(DE-Juel1)130637$$aFeuerbacher, M.$$b4$$uFZJ
000018702 7001_ $$0P:(DE-Juel1)VDB5029$$aHeggen, M.$$b5$$uFZJ
000018702 7001_ $$0P:(DE-Juel1)VDB71676$$aRoitsch, S.$$b6$$uFZJ
000018702 7001_ $$0P:(DE-HGF)0$$aDolinsek, J.$$b7
000018702 773__ $$0PERI:(DE-600)2001649-9$$a10.1080/14786435.2010.512578$$gVol. 91$$q91$$tPhilosophical magazine <London> / A$$v91$$x0141-8610$$y2011
000018702 8567_ $$uhttp://dx.doi.org/10.1080/14786435.2010.512578
000018702 909CO $$ooai:juser.fz-juelich.de:18702$$pVDB
000018702 915__ $$0StatID:(DE-HGF)0010$$aJCR/ISI refereed
000018702 9141_ $$y2011
000018702 9131_ $$0G:(DE-Juel1)FUEK414$$aDE-HGF$$bMaterie$$kP54$$lKondensierte Materie$$vKondensierte Materie$$x0$$zentfällt   bis 2009
000018702 9132_ $$0G:(DE-HGF)POF3-529H$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vAddenda$$x0
000018702 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$gPGI$$kPGI-5$$lMikrostrukturforschung$$x0
000018702 970__ $$aVDB:(DE-Juel1)133391
000018702 980__ $$aVDB
000018702 980__ $$aConvertedRecord
000018702 980__ $$ajournal
000018702 980__ $$aI:(DE-Juel1)PGI-5-20110106
000018702 980__ $$aUNRESTRICTED
000018702 981__ $$aI:(DE-Juel1)ER-C-1-20170209