%0 Journal Article
%A Weidlich, Phillip
%A Schnedler, Michael
%A Portz, Verena
%A Eisele, H.
%A Dunin-Borkowski, Rafal
%A Ebert, Philipp
%T Meandering of overgrown v-shaped defects in epitaxial GaN layers
%J Applied physics letters
%V 105
%@ 0003-6951
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2015-00874
%P 012105
%D 2014
%X The meandering of v-shaped defects in GaN(0001) epitaxial layers is investigated by cross-sectional scanning tunneling microscopy. The spatial position of v-shaped defects is mapped on (101¯0) cleavage planes using a dopant modulation, which traces the overgrown growth front. Strong lateral displacements of the apex of the v-shaped defects are observed. The lateral displacements are suggested to be induced by the meandering of threading dislocations present in the v-shaped defects. The meandering of the dislocation is attributed to interactions with inhomogeneous strain fields.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000339664900043
%R 10.1063/1.4887372
%U https://juser.fz-juelich.de/record/187200