Journal Article

FZJ-2015-00874

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Meandering of overgrown v-shaped defects in epitaxial GaN layers

Weidlich, P. (Corresponding Author) ; Schnedler, M.FZJ* ; Portz, V.FZJ* ; Eisele, H. ; Dunin-Borkowski, R.FZJ* ; Ebert, P.FZJ*

2014
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17331  doi:10.1063/1.4887372

Abstract: The meandering of v-shaped defects in GaN(0001) epitaxial layers is investigated by cross-sectional scanning tunneling microscopy. The spatial position of v-shaped defects is mapped on (101¯0) cleavage planes using a dopant modulation, which traces the overgrown growth front. Strong lateral displacements of the apex of the v-shaped defects are observed. The lateral displacements are suggested to be induced by the meandering of threading dislocations present in the v-shaped defects. The meandering of the dislocation is attributed to interactions with inhomogeneous strain fields.

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Contributing Institute(s):

1. Mikrostrukturforschung (PGI-5)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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