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000187200 1001_ $$0P:(DE-Juel1)139007$$aWeidlich, Phillip$$b0$$eCorresponding Author
000187200 245__ $$aMeandering of overgrown v-shaped defects in epitaxial GaN layers
000187200 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2014
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000187200 520__ $$aThe meandering of v-shaped defects in GaN(0001) epitaxial layers is investigated by cross-sectional scanning tunneling microscopy. The spatial position of v-shaped defects is mapped on (101¯0) cleavage planes using a dopant modulation, which traces the overgrown growth front. Strong lateral displacements of the apex of the v-shaped defects are observed. The lateral displacements are suggested to be induced by the meandering of threading dislocations present in the v-shaped defects. The meandering of the dislocation is attributed to interactions with inhomogeneous strain fields.
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000187200 7001_ $$0P:(DE-Juel1)143949$$aSchnedler, Michael$$b1$$ufzj
000187200 7001_ $$0P:(DE-Juel1)145975$$aPortz, Verena$$b2$$ufzj
000187200 7001_ $$0P:(DE-HGF)0$$aEisele, H.$$b3
000187200 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b4$$ufzj
000187200 7001_ $$0P:(DE-Juel1)130627$$aEbert, Philipp$$b5$$ufzj
000187200 773__ $$0PERI:(DE-600)1469436-0$$a10.1063/1.4887372$$p012105$$tApplied physics letters$$v105$$x0003-6951$$y2014
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