TY  - JOUR
AU  - Weidlich, Phillip
AU  - Schnedler, Michael
AU  - Portz, Verena
AU  - Eisele, H.
AU  - Dunin-Borkowski, Rafal
AU  - Ebert, Philipp
TI  - Meandering of overgrown v-shaped defects in epitaxial GaN layers
JO  - Applied physics letters
VL  - 105
SN  - 0003-6951
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2015-00874
SP  - 012105
PY  - 2014
AB  - The meandering of v-shaped defects in GaN(0001) epitaxial layers is investigated by cross-sectional scanning tunneling microscopy. The spatial position of v-shaped defects is mapped on (101¯0) cleavage planes using a dopant modulation, which traces the overgrown growth front. Strong lateral displacements of the apex of the v-shaped defects are observed. The lateral displacements are suggested to be induced by the meandering of threading dislocations present in the v-shaped defects. The meandering of the dislocation is attributed to interactions with inhomogeneous strain fields.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000339664900043
DO  - DOI:10.1063/1.4887372
UR  - https://juser.fz-juelich.de/record/187200
ER  -