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@ARTICLE{Weidlich:187200,
author = {Weidlich, Phillip and Schnedler, Michael and Portz, Verena
and Eisele, H. and Dunin-Borkowski, Rafal and Ebert,
Philipp},
title = {{M}eandering of overgrown v-shaped defects in epitaxial
{G}a{N} layers},
journal = {Applied physics letters},
volume = {105},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Inst. of Physics},
reportid = {FZJ-2015-00874},
pages = {012105},
year = {2014},
abstract = {The meandering of v-shaped defects in GaN(0001) epitaxial
layers is investigated by cross-sectional scanning tunneling
microscopy. The spatial position of v-shaped defects is
mapped on (101¯0) cleavage planes using a dopant
modulation, which traces the overgrown growth front. Strong
lateral displacements of the apex of the v-shaped defects
are observed. The lateral displacements are suggested to be
induced by the meandering of threading dislocations present
in the v-shaped defects. The meandering of the dislocation
is attributed to interactions with inhomogeneous strain
fields.},
cin = {PGI-5},
ddc = {530},
cid = {I:(DE-Juel1)PGI-5-20110106},
pnm = {421 - Frontiers of charge based Electronics (POF2-421)},
pid = {G:(DE-HGF)POF2-421},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000339664900043},
doi = {10.1063/1.4887372},
url = {https://juser.fz-juelich.de/record/187200},
}