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| Hauptseite > Publikationsdatenbank > Meandering of overgrown v-shaped defects in epitaxial GaN layers > print |
| Hauptseite > Publikationsdatenbank > Meandering of overgrown v-shaped defects in epitaxial GaN layers > print |
| 001 | 187200 | ||
| 005 | 20240610120402.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4887372 |2 doi |
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| 024 | 7 | _ | |a 2128/17331 |2 Handle |
| 037 | _ | _ | |a FZJ-2015-00874 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Weidlich, Phillip |0 P:(DE-Juel1)139007 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Meandering of overgrown v-shaped defects in epitaxial GaN layers |
| 260 | _ | _ | |a Melville, NY |c 2014 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a The meandering of v-shaped defects in GaN(0001) epitaxial layers is investigated by cross-sectional scanning tunneling microscopy. The spatial position of v-shaped defects is mapped on (101¯0) cleavage planes using a dopant modulation, which traces the overgrown growth front. Strong lateral displacements of the apex of the v-shaped defects are observed. The lateral displacements are suggested to be induced by the meandering of threading dislocations present in the v-shaped defects. The meandering of the dislocation is attributed to interactions with inhomogeneous strain fields. |
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| 773 | _ | _ | |a 10.1063/1.4887372 |0 PERI:(DE-600)1469436-0 |p 012105 |t Applied physics letters |v 105 |y 2014 |x 0003-6951 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/187200/files/FZJ-2015-00874.pdf |y OpenAccess |
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