% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Kovacs:187202,
      author       = {Kovacs, Andras and Duchamp, Martial and Dunin-Borkowski,
                      Rafal and Yakimova, Rositza and Neumann, Peter L. and
                      Behmenburg, Hannes and Foltynski, Bartozs and Giesen,
                      Christoph and Heuken, Michael and Pecz, Bela},
      title        = {{G}raphoepitaxy of {H}igh-{Q}uality {G}a{N} {L}ayers on
                      {G}raphene/6{H}-{S}i{C}},
      journal      = {Advanced materials interfaces},
      volume       = {2},
      number       = {2},
      issn         = {2196-7350},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2015-00876},
      pages        = {1400230},
      year         = {2015},
      abstract     = {The implementation of graphene layers in gallium nitride
                      (GaN) heterostructure growth can solve self-heating problems
                      in nitride-based high-power electronic and light-emitting
                      optoelectronic devices. In the present study, high-quality
                      GaN layers are grown on patterned graphene layers and
                      6H–SiC by metalorganic chemical vapor deposition. A
                      periodic pattern of graphene layers is fabricated on
                      6H–SiC by using polymethyl methacrylate deposition and
                      electron beam lithography, followed by etching using an
                      Ar/O2 gas atmosphere. Prior to GaN growth, an AlN buffer
                      layer and an Al0.2Ga0.8N transition layer are deposited. The
                      atomic structures of the interfaces between the 6H–SiC and
                      graphene, as well as between the graphene and AlN, are
                      studied using scanning transmission electron microscopy.
                      Phase separation of the Al0.2Ga0.8N transition layer into an
                      AlN and GaN superlattice is observed. Above the continuous
                      graphene layers, polycrystalline defective GaN is rapidly
                      overgrown by better quality single-crystalline GaN from the
                      etched regions. The lateral overgrowth of GaN results in the
                      presence of a low density of dislocations (≈109 cm−2)
                      and inversion domains and the formation of a smooth GaN
                      surface},
      cin          = {PGI-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000348287700002},
      doi          = {10.1002/admi.201400230},
      url          = {https://juser.fz-juelich.de/record/187202},
}