%0 Journal Article
%A van den Hurk, Jan
%A Dippel, Ann-Christin
%A Cho, Deok-Yong
%A Straquadine, Joshua
%A Breuer, Uwe
%A Walter, Peter
%A Waser, R.
%A Valov, Ilia
%T Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21
%J Physical chemistry, chemical physics
%V 16
%N 34
%@ 1463-9084
%C Cambridge
%I RSC Publ.
%M FZJ-2015-01251
%P 18217-18225
%D 2014
%X Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000341064600020
%R 10.1039/C4CP01759E
%U https://juser.fz-juelich.de/record/187625