Journal Article

FZJ-2015-01251

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21

van den Hurk, J. (Corresponding Author) ; Dippel, A.-C. ; Cho, D.-Y. ; Straquadine, J. ; Breuer, U.FZJ* ; Walter, P. ; Waser, R.FZJ* ; Valov, I.FZJ*

2014
RSC Publ. Cambridge

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Please use a persistent id in citations: doi:10.1039/C4CP01759E

Abstract: Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.

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Contributing Institute(s):

1. Analytik (ZEA-3)
2. Elektronische Materialien (PGI-7)
3. JARA-FIT (JARA-FIT)

Research Program(s):

1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2014

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Database coverage:
; Allianz-Lizenz / DFG ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; NCBI Molecular Biology Database ; Nationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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