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000187625 1001_ $$0P:(DE-HGF)0$$avan den Hurk, Jan$$b0$$eCorresponding Author
000187625 245__ $$aPhysical origins and suppression of Ag dissolution in GeS x -based ECM cells21
000187625 260__ $$aCambridge$$bRSC Publ.$$c2014
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000187625 520__ $$aElectrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.
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000187625 7001_ $$0P:(DE-HGF)0$$aDippel, Ann-Christin$$b1
000187625 7001_ $$0P:(DE-HGF)0$$aCho, Deok-Yong$$b2
000187625 7001_ $$0P:(DE-HGF)0$$aStraquadine, Joshua$$b3
000187625 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b4
000187625 7001_ $$0P:(DE-HGF)0$$aWalter, Peter$$b5
000187625 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6$$ufzj
000187625 7001_ $$0P:(DE-Juel1)131014$$aValov, Ilia$$b7
000187625 773__ $$0PERI:(DE-600)1476244-4$$a10.1039/C4CP01759E$$gVol. 16, no. 34, p. 18217 -$$n34$$p18217-18225$$tPhysical chemistry, chemical physics$$v16$$x1463-9084$$y2014
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