TY  - JOUR
AU  - van den Hurk, Jan
AU  - Dippel, Ann-Christin
AU  - Cho, Deok-Yong
AU  - Straquadine, Joshua
AU  - Breuer, Uwe
AU  - Walter, Peter
AU  - Waser, R.
AU  - Valov, Ilia
TI  - Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21
JO  - Physical chemistry, chemical physics
VL  - 16
IS  - 34
SN  - 1463-9084
CY  - Cambridge
PB  - RSC Publ.
M1  - FZJ-2015-01251
SP  - 18217-18225
PY  - 2014
AB  - Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000341064600020
DO  - DOI:10.1039/C4CP01759E
UR  - https://juser.fz-juelich.de/record/187625
ER  -