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| 001 | 187625 | ||
| 005 | 20210129215048.0 | ||
| 024 | 7 | _ | |a 10.1039/C4CP01759E |2 doi |
| 024 | 7 | _ | |a 1463-9076 |2 ISSN |
| 024 | 7 | _ | |a 1463-9084 |2 ISSN |
| 024 | 7 | _ | |a WOS:000341064600020 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-01251 |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a van den Hurk, Jan |0 P:(DE-HGF)0 |b 0 |e Corresponding Author |
| 245 | _ | _ | |a Physical origins and suppression of Ag dissolution in GeS x -based ECM cells21 |
| 260 | _ | _ | |a Cambridge |c 2014 |b RSC Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1422860820_13708 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a Electrochemical metallisation (ECM) memory cells potentially suffer from limited memory retention time, which slows down the future commercialisation of this type of data memory. In this work, we investigate Ag/GeSx/Pt redox-based resistive memory cells (ReRAM) with and without an additional Ta barrier layer by time-of-flight secondary ion mass spectrometry (ToF-SIMS), X-ray absorption spectroscopy (XAS) and synchrotron high-energy X-ray diffractometry (XRD) to investigate the physical mechanism behind the shift and/or loss of OFF data retention. Electrical measurements demonstrate the effectiveness and high potential of the diffusion barrier layer in practical applications. |
| 536 | _ | _ | |a 421 - Frontiers of charge based Electronics (POF2-421) |0 G:(DE-HGF)POF2-421 |c POF2-421 |f POF II |x 0 |
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| 700 | 1 | _ | |a Dippel, Ann-Christin |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Cho, Deok-Yong |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Straquadine, Joshua |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Breuer, Uwe |0 P:(DE-Juel1)133840 |b 4 |
| 700 | 1 | _ | |a Walter, Peter |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 6 |u fzj |
| 700 | 1 | _ | |a Valov, Ilia |0 P:(DE-Juel1)131014 |b 7 |
| 773 | _ | _ | |a 10.1039/C4CP01759E |g Vol. 16, no. 34, p. 18217 - |0 PERI:(DE-600)1476244-4 |n 34 |p 18217-18225 |t Physical chemistry, chemical physics |v 16 |y 2014 |x 1463-9084 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/187625/files/FZJ-2015-01251.pdf |y Restricted |
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| 913 | 2 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |
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