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000187868 1001_ $$0P:(DE-Juel1)141766$$aRieger, T.$$b0$$eCorresponding Author$$ufzj
000187868 245__ $$aMisfit dislocation free InAs/GaSb core-shell nanowires grown by molecular beam epitaxy
000187868 260__ $$aCambridge$$bRSC Publ.$$c2015
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000187868 520__ $$aIn this report, we present the growth and structural analyses of broken gap InAs/GaSb core–shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the shell growth temperature, two distinct growth regimes for the GaSb shells are identified resulting in conformal or tapered shells. Morphological analyses reveal a dodecagonal nanowire cross-section after GaSb shell growth. Detailed transmission electron microscope investigations from different zone axes confirm that the small lattice mismatch of 0.6% allows the deposition of 40 nm thick GaSb shells free of misfit dislocations. Additionally, an abrupt interface from InAs to GaSb is found. These nanowires are suitable for future devices such as TFETs.
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000187868 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, D.$$b1$$ufzj
000187868 7001_ $$0P:(DE-Juel1)128603$$aLepsa, M. I.$$b2$$ufzj
000187868 773__ $$0PERI:(DE-600)2515664-0$$a10.1039/C4NR05164E$$gVol. 7, no. 1, p. 356 - 364$$n1$$p356 - 364$$tNanoscale$$v7$$x2040-3372$$y2015
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