Journal Article

FZJ-2015-01385

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Misfit dislocation free InAs/GaSb core-shell nanowires grown by molecular beam epitaxy

Rieger, T. (Corresponding Author)FZJ* ; Grützmacher, D.FZJ* ; Lepsa, M. I.FZJ*

2015
RSC Publ. Cambridge

This record in other databases:  

Please use a persistent id in citations: doi:10.1039/C4NR05164E

Abstract: In this report, we present the growth and structural analyses of broken gap InAs/GaSb core–shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the shell growth temperature, two distinct growth regimes for the GaSb shells are identified resulting in conformal or tapered shells. Morphological analyses reveal a dodecagonal nanowire cross-section after GaSb shell growth. Detailed transmission electron microscope investigations from different zone axes confirm that the small lattice mismatch of 0.6% allows the deposition of 40 nm thick GaSb shells free of misfit dislocations. Additionally, an abrupt interface from InAs to GaSb is found. These nanowires are suitable for future devices such as TFETs.

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2015

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Database coverage:
; Current Contents - Physical, Chemical and Earth Sciences ; IF >= 5 ; JCR ; NCBI Molecular Biology Database ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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