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@ARTICLE{Rieger:187868,
author = {Rieger, T. and Grützmacher, D. and Lepsa, M. I.},
title = {{M}isfit dislocation free {I}n{A}s/{G}a{S}b core-shell
nanowires grown by molecular beam epitaxy},
journal = {Nanoscale},
volume = {7},
number = {1},
issn = {2040-3372},
address = {Cambridge},
publisher = {RSC Publ.},
reportid = {FZJ-2015-01385},
pages = {356 - 364},
year = {2015},
abstract = {In this report, we present the growth and structural
analyses of broken gap InAs/GaSb core–shell nanowires by
molecular beam epitaxy using an Au-free approach. Depending
on the shell growth temperature, two distinct growth regimes
for the GaSb shells are identified resulting in conformal or
tapered shells. Morphological analyses reveal a dodecagonal
nanowire cross-section after GaSb shell growth. Detailed
transmission electron microscope investigations from
different zone axes confirm that the small lattice mismatch
of $0.6\%$ allows the deposition of 40 nm thick GaSb shells
free of misfit dislocations. Additionally, an abrupt
interface from InAs to GaSb is found. These nanowires are
suitable for future devices such as TFETs.},
cin = {PGI-9},
ddc = {600},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000346919200039},
doi = {10.1039/C4NR05164E},
url = {https://juser.fz-juelich.de/record/187868},
}