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| Home > Publications database > Misfit dislocation free InAs/GaSb core-shell nanowires grown by molecular beam epitaxy > print |
| 001 | 187868 | ||
| 005 | 20210129215106.0 | ||
| 024 | 7 | _ | |a 10.1039/C4NR05164E |2 doi |
| 024 | 7 | _ | |a 2040-3364 |2 ISSN |
| 024 | 7 | _ | |a 2040-3372 |2 ISSN |
| 024 | 7 | _ | |a WOS:000346919200039 |2 WOS |
| 037 | _ | _ | |a FZJ-2015-01385 |
| 082 | _ | _ | |a 600 |
| 100 | 1 | _ | |a Rieger, T. |0 P:(DE-Juel1)141766 |b 0 |e Corresponding Author |u fzj |
| 245 | _ | _ | |a Misfit dislocation free InAs/GaSb core-shell nanowires grown by molecular beam epitaxy |
| 260 | _ | _ | |a Cambridge |c 2015 |b RSC Publ. |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1423811997_13953 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a article |2 DRIVER |
| 520 | _ | _ | |a In this report, we present the growth and structural analyses of broken gap InAs/GaSb core–shell nanowires by molecular beam epitaxy using an Au-free approach. Depending on the shell growth temperature, two distinct growth regimes for the GaSb shells are identified resulting in conformal or tapered shells. Morphological analyses reveal a dodecagonal nanowire cross-section after GaSb shell growth. Detailed transmission electron microscope investigations from different zone axes confirm that the small lattice mismatch of 0.6% allows the deposition of 40 nm thick GaSb shells free of misfit dislocations. Additionally, an abrupt interface from InAs to GaSb is found. These nanowires are suitable for future devices such as TFETs. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |x 0 |f POF III |
| 588 | _ | _ | |a Dataset connected to CrossRef, juser.fz-juelich.de |
| 700 | 1 | _ | |a Grützmacher, D. |0 P:(DE-Juel1)125588 |b 1 |u fzj |
| 700 | 1 | _ | |a Lepsa, M. I. |0 P:(DE-Juel1)128603 |b 2 |u fzj |
| 773 | _ | _ | |a 10.1039/C4NR05164E |g Vol. 7, no. 1, p. 356 - 364 |0 PERI:(DE-600)2515664-0 |n 1 |p 356 - 364 |t Nanoscale |v 7 |y 2015 |x 2040-3372 |
| 856 | 4 | _ | |u http://pubs.rsc.org/en/Content/ArticleLanding/2015/NR/C4NR05164E#!divAbstract |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/187868/files/FZJ-2015-01385.pdf |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:187868 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)141766 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)125588 |
| 910 | 1 | _ | |a Forschungszentrum Jülich GmbH |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)128603 |
| 913 | 0 | _ | |a DE-HGF |b Schlüsseltechnologien |l Grundlagen für zukünftige Informationstechnologien |1 G:(DE-HGF)POF2-420 |0 G:(DE-HGF)POF2-421 |2 G:(DE-HGF)POF2-400 |v Frontiers of charge based Electronics |x 0 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2015 |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
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| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
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| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 980 | _ | _ | |a journal |
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| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a UNRESTRICTED |
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