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@ARTICLE{Shen:1880,
author = {Shen, W. and Dittmann, R. and Breuer, U. and Waser, R.},
title = {{I}mproved endurance behavior of resistive switching in
({B}a,{S}r){T}i{O}3 thin films with {W} top electrode},
journal = {Applied physics letters},
volume = {93},
issn = {0003-6951},
address = {Melville, NY},
publisher = {American Institute of Physics},
reportid = {PreJuSER-1880},
pages = {222102-1},
year = {2008},
note = {We thank Tobias Menke for helpful discussions and the
critical reading of the manuscript. This work was
financially supported by Intel, Inc., Santa Clara.},
abstract = {We compared the resistive switching performance of barium
strontium titanate (BST) thin films with tungsten (W) and
platinum (Pt) top electrodes, respectively. The yield,
endurance, and reliability were strongly improved for the
samples with W top electrode. Whereas the samples with Pt
top electrode show a fast drop in the resistance for both
high and low resistance states, the devices with W top
electrode can be switched for 10(4) times without any
obvious degradation. We attribute the improved switching
performance to a reversible oxidation and reduction in a WOx
layer at the W-BST interface, which was detected by
time-of-flight secondary-ion-mass spectroscopy
measurements.},
keywords = {J (WoSType)},
cin = {ZCH / IFF-6 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)ZCH-20090406 / I:(DE-Juel1)VDB786 /
$I:(DE-82)080009_20140620$},
pnm = {Grundlagen für zukünftige Informationstechnologien},
pid = {G:(DE-Juel1)FUEK412},
shelfmark = {Physics, Applied},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000261430600034},
doi = {10.1063/1.3039809},
url = {https://juser.fz-juelich.de/record/1880},
}