Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

Shen, W.; Breuer, U.; Dittmann, R.; Waser, R.

doi:10.1063/1.3039809

Journal Article

PreJuSER-1880

Improved endurance behavior of resistive switching in (Ba,Sr)TiO3 thin films with W top electrode

Shen, W.FZJ* ; Dittmann, R.FZJ* ; Breuer, U.FZJ* ; Waser, R.FZJ*

2008
American Institute of Physics Melville, NY

Applied physics letters 93, 222102-1 (2008) [10.1063/1.3039809]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17048 doi:10.1063/1.3039809

Abstract: We compared the resistive switching performance of barium strontium titanate (BST) thin films with tungsten (W) and platinum (Pt) top electrodes, respectively. The yield, endurance, and reliability were strongly improved for the samples with W top electrode. Whereas the samples with Pt top electrode show a fast drop in the resistance for both high and low resistance states, the devices with W top electrode can be switched for 10(4) times without any obvious degradation. We attribute the improved switching performance to a reversible oxidation and reduction in a WOx layer at the W-BST interface, which was detected by time-of-flight secondary-ion-mass spectroscopy measurements.

Keyword(s): J ; barium compounds (auto) ; electrical conductivity transitions (auto) ; electrical resistivity (auto) ; electrodes (auto) ; ferroelectric semiconductors (auto) ; oxidation (auto) ; platinum (auto) ; reduction (chemical) (auto) ; secondary ion mass spectra (auto) ; semiconductor materials (auto) ; semiconductor thin films (auto) ; semiconductor-metal boundaries (auto) ; strontium compounds (auto) ; time of flight mass spectra (auto) ; tungsten (auto)

Classification:

Physics, Applied

Note: We thank Tobias Menke for helpful discussions and the critical reading of the manuscript. This work was financially supported by Intel, Inc., Santa Clara.

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