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@ARTICLE{Wirths:188101,
      author       = {Wirths, S. and Geiger, R. and von den Driesch, N. and
                      Mussler, G. and Stoica, T. and Mantl, S. and Ikonic, Z. and
                      Luysberg, M. and Chiussi, S. and Hartmann, J. M. and Sigg,
                      H. and Faist, J. and Buca, D. and Grützmacher, D.},
      title        = {{L}asing in direct-bandgap {G}e{S}n alloy grown on {S}i},
      journal      = {Nature photonics},
      volume       = {9},
      number       = {2},
      issn         = {1749-4893},
      address      = {London [u.a.]},
      publisher    = {Nature Publ. Group},
      reportid     = {FZJ-2015-01568},
      pages        = {88 - 92},
      year         = {2015},
      abstract     = {Large-scale optoelectronics integration is limited by the
                      inability of Si to emit light efficiently1, because Si and
                      the chemically well-matched Ge are indirect-bandgap
                      semiconductors. To overcome this drawback, several routes
                      have been pursued, such as the all-optical Si Raman laser2
                      and the heterogeneous integration of direct-bandgap III–V
                      lasers on Si3, 4, 5, 6, 7. Here, we report lasing in a
                      direct-bandgap group IV system created by alloying Ge with
                      Sn8 without mechanically introducing strain9, 10. Strong
                      enhancement of photoluminescence emerging from the direct
                      transition with decreasing temperature is the signature of a
                      fundamental direct-bandgap semiconductor. For
                      T ≤ 90 K, the observation of a threshold in emitted
                      intensity with increasing incident optical power, together
                      with strong linewidth narrowing and a consistent
                      longitudinal cavity mode pattern, highlight unambiguous
                      laser action11. Direct-bandgap group IV materials may thus
                      represent a pathway towards the monolithic integration of
                      Si-photonic circuitry and complementary
                      metal–oxide–semiconductor (CMOS) technology.},
      cin          = {PGI-9 / PGI-5 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-5-20110106 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000349354300013},
      doi          = {10.1038/nphoton.2014.321},
      url          = {https://juser.fz-juelich.de/record/188101},
}